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IPD068N10N3GATMA1
MOSFET Transistor, N Channel, 90 A, 100 V, 0.0057 ohm, 10 V, 2.7 V RoHS Compliant: Yes
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| Quantity | Price |
|---|---|
| 1+ | $1.390 |
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Multiple: 5
$6.95
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD068N10N3GATMA1
Newark Part No.50Y2022
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id90A
Drain Source On State Resistance6800µohm
On Resistance Rds(on)0.0057ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd150W
Gate Source Threshold Voltage Max2.7V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
6800µohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.7V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
90A
On Resistance Rds(on)
0.0057ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
150W
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
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