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IPD50N06S409ATMA2
MOSFET, AEC-Q100, N-CH, 60V, TO-252
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ManufacturerINFINEON
Manufacturer Part NoIPD50N06S409ATMA2
Newark Part No.49AC0293
Product RangeOptiMOS T2
Your Part Number
Technical Datasheet
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD50N06S409ATMA2
Newark Part No.49AC0293
Product RangeOptiMOS T2
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id50A
On Resistance Rds(on)0.0071ohm
Drain Source On State Resistance9000µohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd71W
Gate Source Threshold Voltage Max3V
Power Dissipation71W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS T2
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSL-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.0071ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
OptiMOS T2
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Continuous Drain Current Id
50A
Drain Source On State Resistance
9000µohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
71W
Power Dissipation
71W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
-
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
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