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                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. Dual MOSFETs
                      Print Page

                      IPG16N10S461ATMA1

                      Dual MOSFET, Dual N Channel, 100 V, 16 A, 0.061 ohm

                      INFINEON IPG16N10S461ATMA1
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerINFINEON
                      Manufacturer Part NoIPG16N10S461ATMA1
                      Newark Part No.34AC1694
                      Product RangeOptiMOS T2 Series
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      No Longer Available

                      Product Information

                      ManufacturerINFINEON
                      Manufacturer Part NoIPG16N10S461ATMA1
                      Newark Part No.34AC1694
                      Product RangeOptiMOS T2 Series
                      Technical Datasheet

                      Data Sheet

                      Transistor PolarityN Channel
                      Channel TypeDual N Channel
                      Drain Source Voltage Vds100V
                      Drain Source Voltage Vds N Channel100V
                      Drain Source Voltage Vds P Channel-
                      Continuous Drain Current Id16A
                      Drain Source On State Resistance0.053ohm
                      On Resistance Rds(on)0.053ohm
                      Continuous Drain Current Id N Channel16A
                      Continuous Drain Current Id P Channel-
                      Transistor MountingSurface Mount
                      Drain Source On State Resistance N Channel0.061ohm
                      Drain Source On State Resistance P Channel-
                      Rds(on) Test Voltage10V
                      Power Dissipation Pd29W
                      Transistor Case StyleTDSON
                      Gate Source Threshold Voltage Max2.8V
                      No. of Pins3Pins
                      Power Dissipation29W
                      Power Dissipation N Channel29W
                      Power Dissipation P Channel-
                      Operating Temperature Max175°C
                      Product RangeOptiMOS T2 Series
                      QualificationAEC-Q101
                      Automotive Qualification StandardAEC-Q101
                      MSLMSL 1 - Unlimited
                      SVHCNo SVHC (21-Jan-2025)

                      Technical Specifications

                      Transistor Polarity

                      N Channel

                      Drain Source Voltage Vds

                      100V

                      Drain Source Voltage Vds P Channel

                      -

                      Drain Source On State Resistance

                      0.053ohm

                      Continuous Drain Current Id N Channel

                      16A

                      Transistor Mounting

                      Surface Mount

                      Drain Source On State Resistance P Channel

                      -

                      Power Dissipation Pd

                      29W

                      Gate Source Threshold Voltage Max

                      2.8V

                      Power Dissipation

                      29W

                      Power Dissipation P Channel

                      -

                      Product Range

                      OptiMOS T2 Series

                      Automotive Qualification Standard

                      AEC-Q101

                      SVHC

                      No SVHC (21-Jan-2025)

                      Channel Type

                      Dual N Channel

                      Drain Source Voltage Vds N Channel

                      100V

                      Continuous Drain Current Id

                      16A

                      On Resistance Rds(on)

                      0.053ohm

                      Continuous Drain Current Id P Channel

                      -

                      Drain Source On State Resistance N Channel

                      0.061ohm

                      Rds(on) Test Voltage

                      10V

                      Transistor Case Style

                      TDSON

                      No. of Pins

                      3Pins

                      Power Dissipation N Channel

                      29W

                      Operating Temperature Max

                      175°C

                      Qualification

                      AEC-Q101

                      MSL

                      MSL 1 - Unlimited

                      Technical Docs (4)

                      Simulation Model EN

                      Application Note EN

                      EOL Notices EN

                      Technical Data Sheet EN

                      Legislation and Environmental

                      US ECCN:Unknown
                      EU ECCN:Unknown
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:No SVHC (21-Jan-2025)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

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