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IPG20N04S4L08ATMA1
Dual MOSFET, N Channel, 40 V, 20 A, 0.0072 ohm, TDSON, Surface Mount
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567 In Stock
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $2.040 |
| 10+ | $1.300 |
| 25+ | $1.160 |
| 50+ | $1.020 |
| 100+ | $0.877 |
| 250+ | $0.787 |
| 500+ | $0.695 |
| 1000+ | $0.645 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.04
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPG20N04S4L08ATMA1
Newark Part No.50Y2047
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id20A
Continuous Drain Current Id N Channel20A
Continuous Drain Current Id P Channel20A
Drain Source On State Resistance N Channel0.0072ohm
Drain Source On State Resistance P Channel0.0072ohm
Transistor Case StyleTDSON
No. of Pins8Pins
Power Dissipation N Channel54W
Power Dissipation P Channel54W
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
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Product Overview
- OptiMOS™ -T2 power transistor
- Dual N-channel logic level - enhancement mode
- Automotive AEC Q101 qualified
- 175°C operating temperature
- 100% avalanche tested
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id
20A
Continuous Drain Current Id P Channel
20A
Drain Source On State Resistance P Channel
0.0072ohm
No. of Pins
8Pins
Power Dissipation P Channel
54W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds
40V
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id N Channel
20A
Drain Source On State Resistance N Channel
0.0072ohm
Transistor Case Style
TDSON
Power Dissipation N Channel
54W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate