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IPG20N10S4L22ATMA1
Dual MOSFET, N Channel, 100 V, 20 A, 0.02 ohm, TDSON, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPG20N10S4L22ATMA1
Newark Part No.13AC9059
Product RangeOptiMOS T2 Series
Technical Datasheet
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| 1+ | $0.973 |
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| 50+ | $0.895 |
| 100+ | $0.895 |
| 250+ | $0.824 |
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| 1000+ | $0.774 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPG20N10S4L22ATMA1
Newark Part No.13AC9059
Product RangeOptiMOS T2 Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds P Channel100V
Continuous Drain Current Id N Channel20A
Continuous Drain Current Id P Channel20A
Drain Source On State Resistance N Channel0.02ohm
Drain Source On State Resistance P Channel0.02ohm
Transistor Case StyleTDSON
No. of Pins8Pins
Power Dissipation N Channel60W
Power Dissipation P Channel60W
Operating Temperature Max175°C
Product RangeOptiMOS T2 Series
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
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Product Overview
IPG20N10S4L22ATMA1 is an OptiMOS™-T2 power transistor. Applications include automotive battery management system (BMS), diesel direct injection, gasoline multi-port injection, and in-cabin wireless charging.
- AEC Q101 qualified
- 100% avalanche tested
- Feasible for automatic optical inspection (AOI)
- PG-TDSON-8-10 package
- Continuous drain current one channel active is 20A at TC=25°C, VGS=10V
- Gate source voltage is ±16V at Tj=25°C
- Operating and storage temperature range from -55 to +175°C
- Drain-source breakdown voltage is 100V at VGS=0V, ID= 1mA, Tj=25°C
- Drain-source on-state resistance is 24mohm at VGS=4.5V, I D=10A, Tj=25°C
- Gate to source charge is 4.3nC at VDD=80V, ID=20A, VGS=0 to 10V
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
100V
Continuous Drain Current Id P Channel
20A
Drain Source On State Resistance P Channel
0.02ohm
No. of Pins
8Pins
Power Dissipation P Channel
60W
Product Range
OptiMOS T2 Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
100V
Continuous Drain Current Id N Channel
20A
Drain Source On State Resistance N Channel
0.02ohm
Transistor Case Style
TDSON
Power Dissipation N Channel
60W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate