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IPW60R017C7XKSA1
Power MOSFET, N Channel, 600 V, 109 A, 0.017 ohm, TO-247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPW60R017C7XKSA1
Newark Part No.49AC0306
Product RangeCoolMOS C7
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $13.350 |
| 10+ | $13.350 |
| 25+ | $13.350 |
| 50+ | $13.350 |
| 100+ | $13.350 |
| 480+ | $13.350 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPW60R017C7XKSA1
Newark Part No.49AC0306
Product RangeCoolMOS C7
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id109A
Drain Source On State Resistance0.017ohm
On Resistance Rds(on)0.015ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation Pd446W
Power Dissipation446W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS C7
Qualification-
MSL-
Product Overview
600V CoolMOS™ C7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle suitable for use in PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. computing, server, telecom, UPS and solar.
- Suitable for hard and soft switching (PFC and high performance LLC)
- Increased MOSFET dv/dt ruggedness to 120V/ns
- Increased efficiency due to best in class FOMRDS(on)*Eoss and RDS(on)*Qg
- Best in class RDS(on)/package
- Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
- Increased economies of scale by use in PFC and PWM topologies in the application
- Higher dv/dt limit enables faster switching leading to higher efficiency
- Enabling higher system efficiency by lower switching losses
- Increased power density solutions due to smaller packages
- Higher switching frequencies possible without loss in efficiency due to low Eoss and Qg
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.017ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation Pd
446W
No. of Pins
3Pins
Product Range
CoolMOS C7
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
109A
On Resistance Rds(on)
0.015ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.5V
Power Dissipation
446W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate