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IPW65R045C7FKSA1.
Power MOSFET, N Channel, 650 V, 46 A, 0.04 ohm, TO-247, Through Hole
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| Quantity | Price |
|---|---|
| 25+ | $9.280 |
| 50+ | $8.670 |
| 100+ | $8.410 |
| 480+ | $8.320 |
Price for:Each
Minimum: 30
Multiple: 1
$278.40
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPW65R045C7FKSA1.
Newark Part No.27AC6752
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id46A
On Resistance Rds(on)0.04ohm
Drain Source On State Resistance0.04ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd227W
Transistor Case StyleTO-247
Gate Source Threshold Voltage Max3.5V
Power Dissipation227W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.04ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
227W
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
46A
Drain Source On State Resistance
0.04ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-247
Power Dissipation
227W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate