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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF1018EPBF
Newark Part No.08N6374
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id79A
Drain Source On State Resistance0.0071ohm
On Resistance Rds(on)0.0071ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation110W
Power Dissipation Pd110W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
Alternatives for IRF1018EPBF
2 Products Found
Product Overview
The IRF1018EPBF is a 60V single N-channel HEXFET® Power MOSFET with high speed power switching and enhanced body diode dV/dt and dI/dt capability.
- High efficiency synchronous rectification in SMPS
- High frequency hard switching converter
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
Applications
Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0071ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
110W
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
79A
On Resistance Rds(on)
0.0071ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
110W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability