Print Page
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF3205ZPBF
Newark Part No.37J1434
Also Known AsSP001574672
Technical Datasheet
5,644 In Stock
Need more?
2583 Delivery in 1-3 Business Days(US stock)
3061 Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST Standard Shipping
Quantity | Price |
---|---|
1+ | $0.711 |
10+ | $0.711 |
100+ | $0.649 |
500+ | $0.649 |
1000+ | $0.599 |
3000+ | $0.599 |
10000+ | $0.599 |
Price for:Each
Minimum: 1
Multiple: 1
$0.71
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF3205ZPBF
Newark Part No.37J1434
Also Known AsSP001574672
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id110A
On Resistance Rds(on)0.0065ohm
Drain Source On State Resistance0.0065ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Power Dissipation Pd170W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation170W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRF3205ZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
- Advanced process technology
- Repetitive avalanche allowed up to Tjmax
Applications
Automotive, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
55V
On Resistance Rds(on)
0.0065ohm
Transistor Case Style
TO-220AB
Power Dissipation Pd
170W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
110A
Drain Source On State Resistance
0.0065ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
170W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Alternatives for IRF3205ZPBF
1 Product Found
Associated Products
6 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate