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ManufacturerINFINEON
Manufacturer Part NoIRF520NPBF
Newark Part No.19K8210
Also Known AsSP001571310
Technical Datasheet
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF520NPBF
Newark Part No.19K8210
Also Known AsSP001571310
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id9.7A
Drain Source On State Resistance0.2ohm
On Resistance Rds(on)0.2ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Power Dissipation Pd48W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation47W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
- Dynamic dv/dt rating
- Fully avalanche rated
- Advanced process technology
Applications
Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.2ohm
Transistor Case Style
TO-220AB
Power Dissipation Pd
48W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
9.7A
On Resistance Rds(on)
0.2ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
47W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate