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IRF540NPBF.
Power MOSFET, N Channel, 100 V, 33 A, 44 mohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF540NPBF.
Newark Part No.26AC0594
Also Known AsSP001561906
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
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| Quantity | Price |
|---|---|
| 1+ | $1.160 |
| 10+ | $0.841 |
| 100+ | $0.762 |
| 500+ | $0.710 |
| 1000+ | $0.676 |
| 4000+ | $0.662 |
| 10000+ | $0.639 |
Price for:Each
Minimum: 1
Multiple: 1
$1.16
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF540NPBF.
Newark Part No.26AC0594
Also Known AsSP001561906
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id33A
Drain Source On State Resistance44mohm
On Resistance Rds(on)0.044ohm
Transistor MountingThrough Hole
Power Dissipation Pd130mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Transistor Case StyleTO-220AB
Power Dissipation130mW
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (23-Jan-2024)
Product Overview
The IRF540NPBF is 100V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
- Drain to source voltage Vds is 100V
- Gate to source voltage is ±20V
- On resistance Rds(on) of 44mohm at Vgs of 10V
- Power dissipation Pd of 130W at 25°C
- Continuous drain current Id of 33A at Vgs 10V and 25°C
- Operating junction temperature range from -55°C to 175°C
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
44mohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220AB
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
33A
On Resistance Rds(on)
0.044ohm
Power Dissipation Pd
130mW
Gate Source Threshold Voltage Max
4V
Power Dissipation
130mW
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (3)
Associated Products
6 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate