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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF640NPBF
Newark Part No.63J7351
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id18A
On Resistance Rds(on)0.15ohm
Drain Source On State Resistance0.15ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd150W
Gate Source Threshold Voltage Max4V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRF640NPBF is 200V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
- Drain to source voltage Vds is 200V
- Gate to source voltage is ±20V
- On resistance Rds(on) of 150mohm
- Power dissipation Pd of 150W at 25°C
- Continuous drain current Id of 18A at Vgs 10V and 25°C
- Operating junction temperature range from -55°C to 175°C
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.15ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
18A
Drain Source On State Resistance
0.15ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
150W
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate