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IRF7314TRPBF
Dual MOSFET, P Channel, 20 V, 20 V, 5.3 A, 5.3 A, 0.049 ohm
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7314TRPBF
Newark Part No.42Y0406
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id5.3A
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel5.3A
Continuous Drain Current Id P Channel5.3A
Drain Source On State Resistance N Channel0.049ohm
Drain Source On State Resistance P Channel49mohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (23-Jan-2024)
Alternatives for IRF7314TRPBF
1 Product Found
Product Overview
The IRF7314TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Fully avalanche rated
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
5.3A
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
5.3A
Drain Source On State Resistance P Channel
49mohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
5.3A
Drain Source On State Resistance N Channel
0.049ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate