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IRF7324TRPBF
Dual MOSFET, Dual P Channel, 20 V, 9 A
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ManufacturerINFINEON
Manufacturer Part NoIRF7324TRPBF
Newark Part No.42Y0410
Product RangeHEXFET Series
Also Known AsSP001570196
Technical Datasheet
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7324TRPBF
Newark Part No.42Y0410
Product RangeHEXFET Series
Also Known AsSP001570196
Technical Datasheet
Channel TypeDual P Channel
Continuous Drain Current Id9A
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel9A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.018ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel-
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
IRF7324TRPBF is a HEXFET® power MOSFET. This from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
- Trench technology, ultra-low on-resistance
- Dual P-Channel MOSFET, low Profile (<lt/>1.1mm)
- Drain-to-source breakdown voltage is -20V (min, VGS = 0V, ID = -250µA)
- Breakdown voltage temp. coefficient is -0.02V/°C (typ, reference to 25°C, ID = -1mA)
- 0.018ohm static drain-to-source on-resistance (max, VGS = -4.5V, ID = -9.0A)
- Gate threshold voltage range from -0.45 to -1.0V (VDS = VGS, ID = -250µA)
- Drain-to-source leakage current is -1.0µA (max, VDS = -16V, VGS = 0V)
- 42nC typical total gate charge (ID = -9.0A)
- 630pF output capacitance (typ, VDS = -15V)
- SO-8 package, junction and storage temperature range from -55 to + 150°C
Technical Specifications
Channel Type
Dual P Channel
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
9A
Drain Source On State Resistance P Channel
0.018ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
HEXFET Series
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
9A
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
SOIC
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Alternatives for IRF7324TRPBF
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Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate