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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFP064NPBF
Newark Part No.63J6841
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id98A
Drain Source On State Resistance0.008ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
IRFP064NPBF is a fifth-generation HEXFET power MOSFET that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, providing the designer with an extremely efficient and reliable device for use in a wide variety of other applications.
- Advanced process technology
- Ultra low on-resistance, dynamic dv/dt rating
- Fast switching, fully avalanche rated
- Continuous drain current VGS at 10V is 110A
- Maximum power dissipation is 200W
- Linear derating factor is 1.3W/°C
- Gate-to-source voltage is ±20V
- Single pulse avalanche energy is 480mJ
- TO-247AC package
- Operating junction and storage temperature range from -55 to + 175°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
98A
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.008ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
Associated Products
7 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate