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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFP250NPBF
Newark Part No.63J6859
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id30A
Drain Source On State Resistance0.075ohm
On Resistance Rds(on)0.075ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Power Dissipation Pd214W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation214W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRFP250NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
- Drain to source voltage (Vds) of 200V
- Gate to source voltage of ±20V
- On resistance Rds(on) of 75mohm at Vgs 10V
- Power dissipation Pd of 214W at 25°C
- Continuous drain current Id of 30A at Vgs 10V and 25°C
- Operating junction temperature range from -55°C to 175°C
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.075ohm
Transistor Case Style
TO-247AC
Power Dissipation Pd
214W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
30A
On Resistance Rds(on)
0.075ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
214W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate