Print Page
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRFR5410TRPBF
Newark Part No.40M7904
Also Known AsSP001557100
Technical Datasheet
43,630 In Stock
Need more?
4262 Delivery in 1-3 Business Days(US stock)
39368 Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST Standard Shipping
Quantity | Price |
---|---|
1+ | $1.480 |
10+ | $1.030 |
25+ | $1.030 |
50+ | $0.905 |
100+ | $0.782 |
250+ | $0.706 |
500+ | $0.630 |
1000+ | $0.579 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.48
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFR5410TRPBF
Newark Part No.40M7904
Also Known AsSP001557100
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id13A
Drain Source On State Resistance0.205ohm
On Resistance Rds(on)0.205ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Power Dissipation Pd66W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation66W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRFR5410TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
- Advanced process technology
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
Applications
Automotive, Power Management
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.205ohm
Transistor Case Style
TO-252AA
Power Dissipation Pd
66W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
13A
On Resistance Rds(on)
0.205ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
66W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Alternatives for IRFR5410TRPBF
2 Products Found
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate