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IRFZ48NPBF
Power MOSFET, N Channel, 55 V, 64 A, 0.014 ohm, TO-220AB, Through Hole
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ManufacturerINFINEON
Manufacturer Part NoIRFZ48NPBF
Newark Part No.63J7152
Also Known AsSP001552474
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $0.832 |
| 10+ | $0.762 |
| 100+ | $0.692 |
| 500+ | $0.688 |
| 1000+ | $0.681 |
| 4000+ | $0.643 |
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Multiple: 1
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFZ48NPBF
Newark Part No.63J7152
Also Known AsSP001552474
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id64A
Drain Source On State Resistance0.014ohm
On Resistance Rds(on)0.014ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd94W
Gate Source Threshold Voltage Max4V
Power Dissipation130W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRFZ48NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
- 175°C Operating temperature
- Dynamic dV/dt rating
- Fully avalanche rated
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.014ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
64A
On Resistance Rds(on)
0.014ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
94W
Power Dissipation
130W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability