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                      1. Home
                      2. Semiconductors - Discretes
                      3. Transistors
                      4. Bipolar Transistors
                      5. Single Bipolar Junction Transistors - BJT
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                      SMBTA42E6327HTSA1

                      Bipolar (BJT) Single Transistor, NPN, 300 V, 500 mA, 360 mW, SOT-23, Surface Mount

                      INFINEON SMBTA42E6327HTSA1
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerINFINEON
                      Manufacturer Part NoSMBTA42E6327HTSA1
                      Newark Part No.24AC9853
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      62,076 In Stock

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                      526 Delivery in 1-3 Business Days(US stock)
                      61550 Delivery in 2-4 Business Days(UK stock)
                      Order before 9pm EST Standard Shipping
                      QuantityPrice
                      1+$0.047
                      10+$0.047
                      25+$0.047
                      50+$0.047
                      100+$0.047
                      250+$0.047
                      500+$0.047
                      1000+$0.047
                      Price for:Each (Supplied on Cut Tape)
                      Minimum: 1
                      Multiple: 1
                      $0.05
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                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerINFINEON
                      Manufacturer Part NoSMBTA42E6327HTSA1
                      Newark Part No.24AC9853
                      Technical Datasheet

                      Data Sheet

                      Transistor PolarityNPN
                      Collector Emitter Voltage V(br)ceo300V
                      Collector Emitter Voltage Max300V
                      Continuous Collector Current500mA
                      DC Collector Current500mA
                      Power Dissipation Pd360mW
                      Power Dissipation360mW
                      Transistor Case StyleSOT-23
                      Transistor MountingSurface Mount
                      No. of Pins3Pins
                      Transition Frequency70MHz
                      DC Current Gain hFE Min25hFE
                      DC Current Gain hFE25hFE
                      Operating Temperature Max150°C
                      Product Range-
                      QualificationAEC-Q101
                      Automotive Qualification StandardAEC-Q101
                      MSLMSL 1 - Unlimited
                      SVHCNo SVHC (21-Jan-2025)

                      Product Overview

                      SMBTA42E6327HTSA1 is a NPN silicon high-voltage transistor.

                      • Low collector-emitter saturation voltage
                      • Qualified according AEC Q101
                      • 300V minimum collector-emitter breakdown voltage at IC = 1mA, IB = 0
                      • 300V minimum collector base breakdown voltage at IC = 100µA, IE = 0
                      • 6V minimum emitter-base breakdown voltage at IE = 100µA, IC = 0
                      • 25 DC current gain at IC = 1mA, VCE = 10V
                      • 0.5V maximum collector-emitter saturation voltage at IC = 20mA, IB = 2mA
                      • 70MHz transition frequency at IC = 10MHz, VCE = 20V, f = 100MHz
                      • 500 mA collector current, 100mA base current
                      • 3 pin SOT23 package, 150°C junction temperature

                      Technical Specifications

                      Transistor Polarity

                      NPN

                      Collector Emitter Voltage Max

                      300V

                      DC Collector Current

                      500mA

                      Power Dissipation

                      360mW

                      Transistor Mounting

                      Surface Mount

                      Transition Frequency

                      70MHz

                      DC Current Gain hFE

                      25hFE

                      Product Range

                      -

                      Automotive Qualification Standard

                      AEC-Q101

                      SVHC

                      No SVHC (21-Jan-2025)

                      Collector Emitter Voltage V(br)ceo

                      300V

                      Continuous Collector Current

                      500mA

                      Power Dissipation Pd

                      360mW

                      Transistor Case Style

                      SOT-23

                      No. of Pins

                      3Pins

                      DC Current Gain hFE Min

                      25hFE

                      Operating Temperature Max

                      150°C

                      Qualification

                      AEC-Q101

                      MSL

                      MSL 1 - Unlimited

                      Technical Docs (2)

                      EOL Notices EN

                      Technical Data Sheet EN

                      Legislation and Environmental

                      US ECCN:EAR99
                      EU ECCN:Unknown
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:No SVHC (21-Jan-2025)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

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