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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN140N30P
Newark Part No.58M7619
Technical Datasheet
155 In Stock
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5+ | $29.530 |
10+ | $28.440 |
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50+ | $26.610 |
100+ | $26.100 |
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN140N30P
Newark Part No.58M7619
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id140A
Drain Source On State Resistance0.024ohm
On Resistance Rds(on)0.024ohm
Transistor Case StyleISOTOP
Transistor MountingModule
Rds(on) Test Voltage10V
Power Dissipation Pd700W
Gate Source Threshold Voltage Max5V
Power Dissipation700W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The IXFN140N30P is a Polar™ N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features reduced static drain-to-source ON-resistance and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers and high speed power switching applications.
- Avalanche rating
- Low Qg
- Low package inductance
- Easy to mount
- Space saving
Applications
Power Management, Motor Drive & Control
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
140A
On Resistance Rds(on)
0.024ohm
Transistor Mounting
Module
Power Dissipation Pd
700W
Power Dissipation
700W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
300V
Drain Source On State Resistance
0.024ohm
Transistor Case Style
ISOTOP
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
4Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability