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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN200N10P
Newark Part No.58M7621
Technical Datasheet
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5+ | $26.660 |
10+ | $23.150 |
30+ | $22.350 |
50+ | $21.650 |
100+ | $21.240 |
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN200N10P
Newark Part No.58M7621
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id200A
Drain Source On State Resistance0.0075ohm
On Resistance Rds(on)0.0075ohm
Transistor Case StyleISOTOP
Transistor MountingModule
Rds(on) Test Voltage15V
Power Dissipation Pd680W
Gate Source Threshold Voltage Max5V
Power Dissipation680W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The IXFN200N10P is a N-channel enhancement mode Power MOSFET features miniBLOC with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated.
- Fast intrinsic rectifier
- Rugged polysilicon gate cell structure
- Encapsulating epoxy meets UL94V-0, flammability classification
- Rugged polysilicon gate cell structure
- Easy to mount
- High power density
- Space savings
Applications
Power Management, Lighting
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
200A
On Resistance Rds(on)
0.0075ohm
Transistor Mounting
Module
Power Dissipation Pd
680W
Power Dissipation
680W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0075ohm
Transistor Case Style
ISOTOP
Rds(on) Test Voltage
15V
Gate Source Threshold Voltage Max
5V
No. of Pins
4Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability