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IXBX50N360HV
IGBT, 125 A, 2.4 V, 660 W, 3.6 kV, TO-247PLUS-HV, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
ManufacturerLITTELFUSE
Manufacturer Part NoIXBX50N360HV
Newark Part No.29AK0380
Product RangeBiMOSFET Series
Technical Datasheet
379 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $120.810 |
Price for:Each
Minimum: 1
Multiple: 1
$120.81
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXBX50N360HV
Newark Part No.29AK0380
Product RangeBiMOSFET Series
Technical Datasheet
Continuous Collector Current125A
Collector Emitter Saturation Voltage2.4V
Power Dissipation660W
Collector Emitter Voltage Max3.6kV
Transistor Case StyleTO-247PLUS-HV
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product RangeBiMOSFET Series
MSL-
SVHCTo Be Advised
Product Overview
High voltage, high frequency BiMOSFET™ monolithic Bipolar MOS transistor suitable for use in switched-mode and resonant-mode power supplies, Uninterruptible power supplies (UPS), laser generator, capacitor discharge circuit applications.
- High blocking voltage
- High voltage package
- Low conduction losses
- Easy to mount
- Space savings
- High power density
Technical Specifications
Continuous Collector Current
125A
Power Dissipation
660W
Transistor Case Style
TO-247PLUS-HV
Operating Temperature Max
150°C
Product Range
BiMOSFET Series
SVHC
To Be Advised
Collector Emitter Saturation Voltage
2.4V
Collector Emitter Voltage Max
3.6kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate