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IXTA120P065T
Power MOSFET, P Channel, 65 V, 120 A, 0.01 ohm, TO-263AA, Surface Mount
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ManufacturerLITTELFUSE
Manufacturer Part NoIXTA120P065T
Newark Part No.03AH1286
Product RangeTrenchP Series
Technical Datasheet
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|---|---|
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| 25+ | $4.310 |
| 100+ | $4.000 |
| 250+ | $3.740 |
| 500+ | $3.580 |
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTA120P065T
Newark Part No.03AH1286
Product RangeTrenchP Series
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds65V
Continuous Drain Current Id120A
On Resistance Rds(on)0.01ohm
Drain Source On State Resistance0.01ohm
Transistor Case StyleTO-263AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd298W
Power Dissipation298W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product RangeTrenchP Series
SVHCTo Be Advised
Product Overview
P-channel enhancement mode avalanche rated TrenchP™ power MOSFET suitable for use in high-side switching, push pull amplifiers, DC choppers, automatic test equipment, current regulators and battery charger applications.
- Extended FBSOA
- Fast intrinsic diode
- Low RDS(ON) and QG
- Easy to mount
- Space savings
- High power density
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
65V
On Resistance Rds(on)
0.01ohm
Transistor Case Style
TO-263AA
Rds(on) Test Voltage
10V
Power Dissipation Pd
298W
No. of Pins
3Pins
Qualification
-
SVHC
To Be Advised
Transistor Polarity
P Channel
Continuous Drain Current Id
120A
Drain Source On State Resistance
0.01ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation
298W
Operating Temperature Max
150°C
Product Range
TrenchP Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability