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IXTA1N200P3HV
Power MOSFET, N Channel, 2 kV, 1 A, 40 ohm, TO-263HV, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $7.650 |
| 25+ | $6.480 |
| 100+ | $5.620 |
| 250+ | $5.430 |
| 500+ | $5.180 |
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$7.65
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTA1N200P3HV
Newark Part No.03AH1261
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds2kV
Continuous Drain Current Id1A
Drain Source On State Resistance40ohm
On Resistance Rds(on)40ohm
Transistor Case StyleTO-263HV
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation125W
Power Dissipation Pd125W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
2kV
Drain Source On State Resistance
40ohm
Transistor Case Style
TO-263HV
Rds(on) Test Voltage
10V
Power Dissipation
125W
No. of Pins
3Pins
Qualification
-
SVHC
To Be Advised
Transistor Polarity
N Channel
Continuous Drain Current Id
1A
On Resistance Rds(on)
40ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
125W
Operating Temperature Max
150°C
Product Range
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability