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IXTA6N100D2
Power MOSFET, N Channel, 1 kV, 6 A, 2.2 ohm, TO-263AA, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $10.460 |
| 25+ | $8.060 |
| 100+ | $5.660 |
| 250+ | $5.410 |
| 500+ | $5.150 |
Price for:Each
Minimum: 1
Multiple: 1
$10.46
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTA6N100D2
Newark Part No.03AH1399
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds1kV
Continuous Drain Current Id6A
Drain Source On State Resistance2.2ohm
On Resistance Rds(on)2.2ohm
Transistor Case StyleTO-263AA
Transistor MountingSurface Mount
Rds(on) Test Voltage0V
Gate Source Threshold Voltage Max-
Power Dissipation Pd300W
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
1kV
Drain Source On State Resistance
2.2ohm
Transistor Case Style
TO-263AA
Rds(on) Test Voltage
0V
Power Dissipation Pd
300W
No. of Pins
3Pins
Qualification
-
SVHC
To Be Advised
Channel Type
N Channel
Continuous Drain Current Id
6A
On Resistance Rds(on)
2.2ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
-
Power Dissipation
300W
Operating Temperature Max
150°C
Product Range
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability