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IXTH1N450HV
Power MOSFET, N Channel, 4.5 kV, 1 A, 80 ohm, TO-247HV, Through Hole
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTH1N450HV
Newark Part No.03AH1450
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds4.5kV
Continuous Drain Current Id1A
Drain Source On State Resistance80ohm
On Resistance Rds(on)80ohm
Transistor Case StyleTO-247HV
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max6V
Power Dissipation Pd520W
Power Dissipation520W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Product Overview
N-channel enhancement mode high voltage power MOSFET suitable for use in high voltage power supplies, capacitor discharge applications, pulse circuit and laser and X-Ray generation systems applications.
- High blocking voltage
- High voltage power MOSFET
- Easy to mount
- Space savings
- High power density
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
4.5kV
Drain Source On State Resistance
80ohm
Transistor Case Style
TO-247HV
Rds(on) Test Voltage
10V
Power Dissipation Pd
520W
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
1A
On Resistance Rds(on)
80ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
6V
Power Dissipation
520W
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability