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IXTP32P20T
Power MOSFET, P Channel, 200 V, 32 A, 0.13 ohm, TO-220AB, Through Hole
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ManufacturerLITTELFUSE
Manufacturer Part NoIXTP32P20T
Newark Part No.03AH1681
Product RangeTrenchP Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $4.520 |
| 25+ | $4.520 |
| 100+ | $4.520 |
| 250+ | $4.520 |
| 500+ | $4.520 |
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTP32P20T
Newark Part No.03AH1681
Product RangeTrenchP Series
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id32A
On Resistance Rds(on)0.13ohm
Drain Source On State Resistance0.13ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation300W
Power Dissipation Pd300W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product RangeTrenchP Series
SVHCTo Be Advised
Product Overview
P-channel enhancement mode avalanche rated TrenchP™ power MOSFET suitable for use in high-side switching, push pull amplifiers, DC choppers, automatic test equipment, current regulators and battery charger applications.
- Extended FBSOA
- Fast intrinsic diode
- Low RDS(ON) and QG
- Easy to mount
- Space savings
- High power density
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.13ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
300W
No. of Pins
3Pins
Qualification
-
SVHC
To Be Advised
Transistor Polarity
P Channel
Continuous Drain Current Id
32A
Drain Source On State Resistance
0.13ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
300W
Operating Temperature Max
150°C
Product Range
TrenchP Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability