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IXTT1N250HV
Power MOSFET, N Channel, 2.5 kV, 1.5 A, 40 ohm, TO-268 (D3PAK), Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $32.560 |
| 5+ | $32.560 |
| 10+ | $32.560 |
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Product Information
ManufacturerIXYS RF
Manufacturer Part NoIXTT1N250HV
Newark Part No.03AH1801
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds2.5kV
Continuous Drain Current Id1.5A
On Resistance Rds(on)40ohm
Drain Source On State Resistance40ohm
Transistor Case StyleTO-268 (D3PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd250W
Power Dissipation250W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (12-Jan-2017)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
2.5kV
On Resistance Rds(on)
40ohm
Transistor Case Style
TO-268 (D3PAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
250W
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (12-Jan-2017)
Transistor Polarity
N Channel
Continuous Drain Current Id
1.5A
Drain Source On State Resistance
40ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation
250W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability