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CM300DX-24S
IGBT Module, Dual [Half Bridge], 300 A, 1.2 kV, 2.27 kW, 150 °C
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM300DX-24S
Newark Part No.73R7446
Product RangeNX- Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 44 week(s)
| Quantity | Price |
|---|---|
| 10+ | $173.580 |
| 25+ | $170.710 |
Price for:Each
Minimum: 10
Multiple: 1
$1,735.80
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Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM300DX-24S
Newark Part No.73R7446
Product RangeNX- Series
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityDual N Channel
DC Collector Current300A
Continuous Collector Current300A
Collector Emitter Saturation Voltage Vce(on)1.2kV
Collector Emitter Saturation Voltage1.2kV
Power Dissipation2.27kW
Power Dissipation Pd2.27kW
Collector Emitter Voltage V(br)ceo1.2kV
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Transistor Case Style-
No. of Pins11Pins
IGBT TerminationTab
IGBT TechnologyIGBT 6
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product RangeNX- Series
SVHCTo Be Advised
Product Overview
The CM300DX-24S is a dual IGBTMOD™ Module designed for use in switching applications. The NX-S series module consists of two IGBT transistors in a half-bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking base plate, offering simplified system assembly and thermal management.
- Low drive power
- Low collector-to-emitter saturation voltage
- Discrete super-fast recovery free-wheel diode
- Isolated base plate for easy heat sinking
Applications
Motor Drive & Control, Power Management
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
300A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation
2.27kW
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Max
150°C
No. of Pins
11Pins
IGBT Technology
IGBT 6
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
Dual N Channel
Continuous Collector Current
300A
Collector Emitter Saturation Voltage
1.2kV
Power Dissipation Pd
2.27kW
Junction Temperature, Tj Max
150°C
Transistor Case Style
-
IGBT Termination
Tab
Collector Emitter Voltage Max
1.2kV
Product Range
NX- Series
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate