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2N7002P,215
Power MOSFET, N Channel, 60 V, 360 mA, 1 ohm, SOT-23, Surface Mount
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Product Information
ManufacturerNEXPERIA
Manufacturer Part No2N7002P,215
Newark Part No.28T0307
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id360mA
Drain Source On State Resistance1ohm
On Resistance Rds(on)1ohm
Transistor Case StyleTO-236AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd420mW
Gate Source Threshold Voltage Max1.75V
Power Dissipation420mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The 2N7002P,215 is a N-channel enhancement-mode MOSFET designed in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits.
- Logic-level compatible
- Very fast switching
- AEC-Q101 qualified
Applications
Automotive, Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
360mA
On Resistance Rds(on)
1ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
420mW
Power Dissipation
420mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
1ohm
Transistor Case Style
TO-236AB
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.75V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate