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2N7002PW,115
Power MOSFET, N Channel, 60 V, 310 mA, 1.6 ohm, SOT-323, Surface Mount
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $0.284 |
| 10+ | $0.181 |
| 25+ | $0.160 |
| 50+ | $0.141 |
| 100+ | $0.121 |
| 250+ | $0.107 |
| 500+ | $0.093 |
| 1000+ | $0.071 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$0.28
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Product Information
ManufacturerNEXPERIA
Manufacturer Part No2N7002PW,115
Newark Part No.84R0970
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id310mA
On Resistance Rds(on)1ohm
Drain Source On State Resistance1.6ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd200mW
Gate Source Threshold Voltage Max1.75V
Power Dissipation200mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
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Product Overview
The 2N7002PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology.
- Logic Level Compatible
- Very Fast Switching
- ESD Protection Upto 1.5kV
- AEC-Q101 Qualified
Applications
Audio, Power Management, Automotive, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
310mA
Drain Source On State Resistance
1.6ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
200mW
Power Dissipation
200mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
On Resistance Rds(on)
1ohm
Transistor Case Style
SOT-323
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.75V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability