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Quantity | Price |
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1+ | $0.115 |
25+ | $0.115 |
50+ | $0.115 |
100+ | $0.115 |
250+ | $0.115 |
500+ | $0.115 |
1000+ | $0.106 |
2500+ | $0.097 |
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSH103,215
Newark Part No.75R4687
Technical Datasheet
SVHCNo SVHC (15-Jan-2018)
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Product Overview
The BSH103 from NXP is a surface mount, N channel enhancement mode MOS transistor in SOT-23 package using TrenchMOS technology. This transistor features very low threshold, high speed switching, no secondary breakdown and direct interface to CMOS, TTL. BSH103 is designed and qualified for use in high frequency applications, glue logic interface between logic blocks or periphery, computing, battery powered applications.
- Suitable for use with all 5V logic families
- Suitable for very low gate drive sources
- Drain to source voltage (Vds) of 30V
- Gate to source voltage of ±8V
- Drain current (Id) of 850mA
- Power dissipation (Pd) of 750mW
- Operating junction temperature range from -55°C to 150°C
Applications
Power Management, Consumer Electronics, Portable Devices, Industrial
Warnings
Market demand for this product has caused an extension in lead times, delivery dates may fluctuate
Technical Specifications
SVHC
No SVHC (15-Jan-2018)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate