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GAN080-650EBEZ
Gallium Nitride (GaN) Transistor, 650 V, 29 A, 0.06 ohm, 6.2 nC, DFN8080, Surface Mount
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3,897 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $9.300 |
| 10+ | $9.230 |
| 25+ | $9.150 |
| 50+ | $8.980 |
| 100+ | $8.800 |
| 250+ | $8.560 |
| 500+ | $8.320 |
| 1000+ | $8.200 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$9.30
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoGAN080-650EBEZ
Newark Part No.74AK7561
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id29A
Drain Source On State Resistance0.06ohm
Typical Gate Charge6.2nC
Transistor Case StyleDFN8080
Transistor MountingSurface Mount
No. of Pins8Pins
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.06ohm
Transistor Case Style
DFN8080
No. of Pins
8Pins
Qualification
-
Continuous Drain Current Id
29A
Typical Gate Charge
6.2nC
Transistor Mounting
Surface Mount
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability