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NX7002AKW,115
MOSFET, SINGLE, N CHANNEL, 60V, 0.17A, SOT323
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| Quantity | Price |
|---|---|
| 1+ | $0.151 |
| 10+ | $0.139 |
| 100+ | $0.049 |
| 500+ | $0.041 |
| 1000+ | $0.033 |
| 2500+ | $0.027 |
| 12000+ | $0.022 |
| 27000+ | $0.020 |
Price for:Each
Minimum: 5
Multiple: 5
$0.76
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNX7002AKW,115
Newark Part No.43W6131
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id170mA
Drain Source On State Resistance4.5ohm
On Resistance Rds(on)3ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Power Dissipation Pd220mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Power Dissipation220mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The NX7002AKW is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, low-side load-switch, high-speed line driver and switching circuit applications.
- Very fast switching
- ESD protected
- -55 to 150°C Junction temperature range
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
170mA
On Resistance Rds(on)
3ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
220mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
4.5ohm
Transistor Case Style
SOT-323
Power Dissipation Pd
220mW
Gate Source Threshold Voltage Max
1.6V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability