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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPBSS4350T,215
Newark Part No.38K6399
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max50V
Collector Emitter Voltage V(br)ceo50V
DC Collector Current3A
Continuous Collector Current3A
Power Dissipation300mW
Power Dissipation Pd300mW
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency100MHz
DC Current Gain hFE Min300hFE
DC Current Gain hFE300hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The PBSS4350T is a 3A NPN breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package.
- Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
- High collector current capability
- High collector current gain
- Improved efficiency due to reduced heat generation
- PNP complement is PBSS5350T
- ZC Marking code
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
Continuous Collector Current
3A
Power Dissipation Pd
300mW
Transistor Mounting
Surface Mount
Transition Frequency
100MHz
DC Current Gain hFE
300hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
50V
DC Collector Current
3A
Power Dissipation
300mW
Transistor Case Style
SOT-23
No. of Pins
3Pins
DC Current Gain hFE Min
300hFE
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Alternatives for PBSS4350T,215
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability