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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPBSS8110T,215
Newark Part No.38K6432
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max100V
Collector Emitter Voltage V(br)ceo100V
Continuous Collector Current1A
Power Dissipation300mW
Power Dissipation Pd300mW
DC Collector Current1A
Transistor Case StyleSOT-23
DC Current Gain hFE150hFE
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency100MHz
DC Current Gain hFE Min150hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The PBSS8110T is a 1A NPN breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package.
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- Higher efficiency leading to less heat generation
- Reduced printed-circuit board requirements
- PNP complement is PBSS9110T
- U8 Marking code
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
100V
Power Dissipation
300mW
DC Collector Current
1A
DC Current Gain hFE
150hFE
No. of Pins
3Pins
DC Current Gain hFE Min
150hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
100V
Continuous Collector Current
1A
Power Dissipation Pd
300mW
Transistor Case Style
SOT-23
Transistor Mounting
Surface Mount
Transition Frequency
100MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Alternatives for PBSS8110T,215
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability