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PMV32UP,215
Power MOSFET, P Channel, 20 V, 4 A, 0.032 ohm, SOT-23, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.607 |
| 10+ | $0.502 |
| 25+ | $0.447 |
| 50+ | $0.393 |
| 100+ | $0.339 |
| 250+ | $0.302 |
| 500+ | $0.266 |
| 1000+ | $0.229 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$3.04
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMV32UP,215
Newark Part No.47T2356
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4A
On Resistance Rds(on)0.032ohm
Drain Source On State Resistance0.032ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd510mW
Gate Source Threshold Voltage Max700mV
Power Dissipation510mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The PMV32UP is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications.
- 1.8V Drain-source ON-state resistance rated
- Very fast switching
- -55 to 150°C Junction temperature range
Applications
Power Management, Industrial
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4A
Drain Source On State Resistance
0.032ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
510mW
Power Dissipation
510mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.032ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
700mV
No. of Pins
3Pins
Product Range
-
MSL
-
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability