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BLS6G2731-120,112
RF FET Transistor, 32 V, 33 A, 120 W, 2.7 GHz, 3.1 GHz, SOT-502B
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 19 week(s)
Product Information
ManufacturerNXP
Manufacturer Part NoBLS6G2731-120,112
Newark Part No.70R2898
Technical Datasheet
Drain Source Voltage Vds32V
Continuous Drain Current Id33A
Power Dissipation120W
Power Dissipation Pd120W
Operating Frequency Min2.7GHz
Operating Frequency Max3.1GHz
Transistor Case StyleSOT-502B
RF Transistor CaseSOT-502B
No. of Pins2Pins
Operating Temperature Max225°C
Channel TypeN Channel
Transistor MountingFlange
Product Range-
MSL-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Drain Source Voltage Vds
32V
Power Dissipation
120W
Operating Frequency Min
2.7GHz
Transistor Case Style
SOT-502B
No. of Pins
2Pins
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Continuous Drain Current Id
33A
Power Dissipation Pd
120W
Operating Frequency Max
3.1GHz
RF Transistor Case
SOT-502B
Operating Temperature Max
225°C
Transistor Mounting
Flange
MSL
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate