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Product Information
ManufacturerNXP
Manufacturer Part NoMRF1535NT1
Newark Part No.22M7859
Technical Datasheet
Drain Source Voltage Vds40V
Continuous Drain Current Id6A
Power Dissipation35W
Power Dissipation Pd35W
Operating Frequency Min400MHz
Operating Frequency Max520MHz
Transistor Case StyleTO-272
RF Transistor CaseTO-272
No. of Pins6Pins
Operating Temperature Max200°C
Channel TypeN Channel
Transistor MountingFlange
Product Range-
MSLMSL 3 - 168 hours
SVHCNo SVHC (15-Jan-2019)
Product Overview
The MRF1535NT1 is a lateral N-channel broadband RF Power MOSFET designed for broadband commercial and industrial applications with frequencies to 520MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 12.5V mobile FM equipment.
- Capable of handling 20:1 VSWR (at 15.6VDC, 520MHz, 2dB overdrive)
- Excellent thermal stability
- Characterized with series equivalent large-signal impedance parameters
- 55% Efficiency (at 520MHz, 12.5V)
- 13.5dB Power gain (at 520MHz, 12.5V)
- ±20V Gate to Source voltage (VGS)
- LDMOS Die technology
- 0.9°C/W Thermal resistance
Applications
Communications & Networking, Commercial, Industrial, RF Communications
Technical Specifications
Drain Source Voltage Vds
40V
Power Dissipation
35W
Operating Frequency Min
400MHz
Transistor Case Style
TO-272
No. of Pins
6Pins
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (15-Jan-2019)
Continuous Drain Current Id
6A
Power Dissipation Pd
35W
Operating Frequency Max
520MHz
RF Transistor Case
TO-272
Operating Temperature Max
200°C
Transistor Mounting
Flange
MSL
MSL 3 - 168 hours
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2019)
Download Product Compliance Certificate
Product Compliance Certificate