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Available to Order
Manufacturer Standard Lead Time: 12 week(s)
Quantity | Price |
---|---|
10+ | $182.240 |
Price for:Each (Supplied on Cut Tape)
Minimum: 50
Multiple: 50
$9,112.00
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Product Information
ManufacturerNXP
Manufacturer Part NoMRFE6VP5600HR5
Newark Part No.24T5453
Technical Datasheet
Drain Source Voltage Vds130V
Continuous Drain Current Id100mA
Power Dissipation1.667kW
Power Dissipation Pd1.667kW
Operating Frequency Min1.8MHz
Operating Frequency Max600MHz
Transistor Case StyleNI-1230
No. of Pins4Pins
RF Transistor CaseNI-1230
Operating Temperature Max225°C
Product Range-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MRFE6VP5600HR5 is a 130V N-channel Enhancement Mode Lateral MOSFET designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications.
- Unmatched input and output allowing wide frequency range utilization
- Device can be used single ended or in a push pull configuration
- Qualified up to a maximum of 50VDD operation
- Characterized from 30V to 50V for extended power range
- Suitable for linear application with appropriate biasing
- Integrated ESD protection with greater negative gate source voltage
Applications
Industrial, Defence, Military & Aerospace, Communications & Networking
Technical Specifications
Drain Source Voltage Vds
130V
Power Dissipation
1.667kW
Operating Frequency Min
1.8MHz
Transistor Case Style
NI-1230
RF Transistor Case
NI-1230
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Continuous Drain Current Id
100mA
Power Dissipation Pd
1.667kW
Operating Frequency Max
600MHz
No. of Pins
4Pins
Operating Temperature Max
225°C
MSL
-
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate