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BD137G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 65 W, 1.5 A, 40 RoHS Compliant: Yes
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| Quantity | Price |
|---|---|
| 1+ | $0.682 |
| 10+ | $0.676 |
| 100+ | $0.593 |
| 500+ | $0.489 |
| 1000+ | $0.453 |
| 2500+ | $0.445 |
| 10000+ | $0.438 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBD137G
Newark Part No.26W8127
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max60V
Collector Emitter Voltage V(br)ceo60V
Continuous Collector Current1.5A
Power Dissipation65W
Power Dissipation Pd65W
Transistor Case StyleTO-225AA
DC Collector Current1.5A
DC Current Gain hFE40hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min40hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
60V
Power Dissipation
65W
Transistor Case Style
TO-225AA
DC Current Gain hFE
40hFE
No. of Pins
3Pins
DC Current Gain hFE Min
40hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
60V
Continuous Collector Current
1.5A
Power Dissipation Pd
65W
DC Collector Current
1.5A
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability