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ManufacturerONSEMI
Manufacturer Part NoFCP104N60
Newark Part No.54AH6230
Product RangeSuperFET II
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFCP104N60
Newark Part No.54AH6230
Product RangeSuperFET II
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id37A
On Resistance Rds(on)0.096ohm
Drain Source On State Resistance0.096ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Power Dissipation Pd357W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation357W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeSuperFET II
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.096ohm
Transistor Case Style
TO-220
Power Dissipation Pd
357W
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Product Range
SuperFET II
SVHC
Lead (27-Jun-2024)
Transistor Polarity
N Channel
Continuous Drain Current Id
37A
Drain Source On State Resistance
0.096ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
357W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
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