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FDS5670
MOSFET, N, SO-8
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4,649 In Stock
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Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $2.980 |
| 10+ | $2.280 |
| 25+ | $2.140 |
| 50+ | $2.000 |
| 100+ | $1.860 |
| 250+ | $1.730 |
| 500+ | $1.600 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$14.90
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS5670
Newark Part No.96K9879
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id10A
Drain Source On State Resistance0.014ohm
On Resistance Rds(on)0.014ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd2.5W
Gate Source Threshold Voltage Max2.4V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.014ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.4V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
10A
On Resistance Rds(on)
0.014ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.5W
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
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Product Compliance Certificate
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