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Quantity | Price |
---|---|
1+ | $1.230 |
10+ | $1.010 |
25+ | $0.942 |
50+ | $0.878 |
100+ | $0.813 |
250+ | $0.741 |
500+ | $0.668 |
1000+ | $0.604 |
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Multiple: 1
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQD2P40TM
Newark Part No.46AC0858
Product RangeQFET
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds400V
Continuous Drain Current Id1.56A
On Resistance Rds(on)5ohm
Drain Source On State Resistance5ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Power Dissipation Pd38W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation38W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeQFET
Qualification-
SVHCLead (27-Jun-2024)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
400V
On Resistance Rds(on)
5ohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation Pd
38W
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
QFET
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
1.56A
Drain Source On State Resistance
5ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
38W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability