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Product Information
ManufacturerONSEMI
Manufacturer Part No2N7000.
Newark Part No.26AC6371
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id200mA
On Resistance Rds(on)1.2ohm
Drain Source On State Resistance1.2ohm
Transistor MountingThrough Hole
Power Dissipation Pd400mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.1V
Transistor Case StyleTO-226AA
Power Dissipation400mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Product Overview
The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed current up to 2A. It is also suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
- Voltage controlled small signal switch
- Rugged and Reliable
- High saturation current capability
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
1.2ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Transistor Case Style
TO-226AA
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
200mA
Drain Source On State Resistance
1.2ohm
Power Dissipation Pd
400mW
Gate Source Threshold Voltage Max
2.1V
Power Dissipation
400mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate