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2N7002DW
Dual MOSFET, N Channel, 60 V, 60 V, 115 mA, 115 mA, 1.6 ohm
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| 50+ | $0.107 |
| 100+ | $0.107 |
| 250+ | $0.107 |
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Product Information
ManufacturerONSEMI
Manufacturer Part No2N7002DW
Newark Part No.05R0387
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id115mA
Drain Source Voltage Vds60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel115mA
Continuous Drain Current Id P Channel115mA
Drain Source On State Resistance N Channel1.6ohm
Drain Source On State Resistance P Channel1.6ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel200mW
Power Dissipation P Channel200mW
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (23-Jan-2024)
Product Overview
The 2N7002DW is an N-channel Enhancement Mode Field Effect Transistor features low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed and low input/output leakage.
Applications
Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
115mA
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
115mA
Drain Source On State Resistance P Channel
1.6ohm
No. of Pins
6Pins
Power Dissipation P Channel
200mW
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds
60V
Continuous Drain Current Id N Channel
115mA
Drain Source On State Resistance N Channel
1.6ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
200mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (2)
Alternatives for 2N7002DW
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability