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Product Information
ManufacturerONSEMI
Manufacturer Part No2N7002K
Newark Part No.31Y5852
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id300mA
On Resistance Rds(on)2ohm
Drain Source On State Resistance2ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd350mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation350mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The 2N7002K is a N-channel enhancement mode Field Effect Transistor features low on resistance, low gate threshold voltage, low input capacitance and fast switching speed.
- Low input/output leakage
- ±20V Gate-source voltage
Applications
Power Management, Motor Drive & Control
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
2ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
350mW
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
300mA
Drain Source On State Resistance
2ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
350mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Alternatives for 2N7002K
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate