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BC636
Bipolar (BJT) Single Transistor, PNP, 45 V, 1 A, 1 W, TO-92, Through Hole
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 9 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $0.087 |
Price for:Each
Minimum: 6000
Multiple: 2000
$522.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBC636
Newark Part No.58K0105
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo45V
Collector Emitter Voltage Max45V
DC Collector Current1A
Continuous Collector Current1A
Power Dissipation Pd1W
Power Dissipation1W
Transistor MountingThrough Hole
DC Current Gain hFE40hFE
Transistor Case StyleTO-92
No. of Pins3Pins
Transition Frequency100MHz
DC Current Gain hFE Min40hFE
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCLead
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage Max
45V
Continuous Collector Current
1A
Power Dissipation
1W
DC Current Gain hFE
40hFE
No. of Pins
3Pins
DC Current Gain hFE Min
40hFE
Qualification
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
45V
DC Collector Current
1A
Power Dissipation Pd
1W
Transistor Mounting
Through Hole
Transistor Case Style
TO-92
Transition Frequency
100MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate