Print Page
BSS123
Power MOSFET, N Channel, 100 V, 170 mA, 1.2 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
49,793 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $0.062 |
| 50+ | $0.062 |
| 100+ | $0.062 |
| 250+ | $0.062 |
| 500+ | $0.062 |
| 1000+ | $0.057 |
| 2500+ | $0.057 |
| 5000+ | $0.057 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.06
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoBSS123
Newark Part No.58K8768
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id170mA
Drain Source On State Resistance1.2ohm
On Resistance Rds(on)1.2ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd360mW
Transistor Case StyleSOT-23
Gate Source Threshold Voltage Max1.7V
Power Dissipation360mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (23-Jan-2024)
Product Overview
The BSS123 is N channel logic level enhancement mode field effect transistor in SOT-23 package. This product is designed to minimize on state resistance while providing rugged, reliable and fast switching performance thus BSS123 are suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
- Drain to source voltage (Vds) of 100V
- Gate to source voltage of ±20V
- Low on state resistance of 1.2ohm at Vgs 10V
- Continuous drain current of 170mA
- Maximum power dissipation of 360mW
- Operating junction temperature range from -55°C to 150°C
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
1.2ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
360mW
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
170mA
On Resistance Rds(on)
1.2ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-23
Power Dissipation
360mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (2)
Alternatives for BSS123
4 Products Found
Associated Products
7 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability