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BSS123LT1G
Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.240 |
| 50+ | $0.131 |
| 100+ | $0.080 |
| 250+ | $0.078 |
| 500+ | $0.076 |
| 1000+ | $0.073 |
| 2500+ | $0.063 |
| 5000+ | $0.051 |
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Multiple: 1
$0.24
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBSS123LT1G
Newark Part No.83H6428
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id170mA
Drain Source On State Resistance6ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10VDC
Gate Source Threshold Voltage Max2.6V
Power Dissipation225mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (23-Jan-2024)
Product Overview
BSS123LT1G is a 170mamps, 100volts, N-channel power MOSFET. It is general usage and suitable for many different applications.
- 100VDC drain-source voltage
- Continuous gate-source voltage is ±20VDC
- Continuous drain current is 0.17Adc
- Junction and storage temperature range from -55 to +150°C
- Static drain-source on-resistance is 6ohm maximum ((VGS = 10Vdc, ID = 100mAdc)
- SOT-23 package
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
170mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10VDC
Power Dissipation
225mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
6ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.6V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability